Electrode for a discharge chamber

ABSTRACT

A discharge chamber for a deep ultraviolet (DUV) light source includes a housing; and a first electrode and a second electrode in the housing, the first electrode and the second electrode being separated from each other to form a discharge region between the first electrode and the second electrode, the discharge region being configured to receive a gain medium including at least one noble gas and a halogen gas. At least one of the first electrode and the second electrode includes a metal alloy including more than 33% and less than 50% zinc by weight.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.16/955,952, filed Jun. 19, 2020 and titled “ELECTRODE FOR A DISCHARGECHAMBER;” which is the National Phase of PCT/US2018/065832, filed onDec. 14, 2018, and titled “ELECTRODE FOR A DISCHARGE CHAMBER;” whichclaims priority of U.S. Application No. 62/616,357, filed on Jan. 11,2018, and titled “ELECTRODE FOR A DISCHARGE CHAMBER.” Each of thesepatent applications is incorporated herein in its entirety by reference.

TECHNICAL FIELD

This disclosure relates to electrodes for a discharge chamber. Thedischarge chamber may be part of, for example, a deep ultraviolet light(DUV) source.

BACKGROUND

Photolithography is the process by which semiconductor circuitry ispatterned on a substrate such as a silicon wafer. A photolithographyoptical source provides the deep ultraviolet (DUV) light used to exposea photoresist on the wafer. One type of gas discharge light source usedin photolithography is known as an excimer light source or laser. Anexcimer light source typically uses a combination of one or more noblegases, such as argon, krypton, or xenon, and a reactive such as fluorineor chlorine. The excimer light source derives its name from the factthat under the appropriate condition of electrical stimulation (energysupplied) and high pressure (of the gas mixture), a pseudo-moleculecalled an excimer is created, which only exists in an energized stateand gives rise to amplified light in the ultraviolet range. An excimerlight source produces a light beam that has a wavelength in the deepultraviolet (DUV) range and this light beam is used to patternsemiconductor substrates (or wafers) in a photolithography apparatus.The excimer light source can be built using a single gas dischargechamber or using a plurality of gas discharge chambers.

SUMMARY

In one general aspect, a discharge chamber for a deep ultraviolet (DUV)light source includes a housing; and a first electrode and a secondelectrode in the housing, the first electrode and the second electrodebeing separated from each other to form a discharge region between thefirst electrode and the second electrode, the discharge region beingconfigured to receive a gain medium including at least one noble gas anda halogen gas. At least one of the first electrode and the secondelectrode includes a metal alloy including more than 33% and less than50% zinc by weight.

Implementations may include one or more of the following features. Thefirst electrode may be a cathode and the second electrode may an anode,and the second electrode may be the metal alloy including more than 33%and less than 50% zinc by weight. The metal alloy also may includecopper. The halogen gas may include fluorine. The noble gas may includeargon, krypton, neon, and/or xenon. The metal alloy of the secondelectrode may include between 35% and 50% zinc by weight. The metalalloy of the second electrode may include between 37% and 50% zinc byweight. The metal alloy of the second electrode may include between 40%and 50% zinc by weight. The metal alloy of the second electrode mayinclude more than 33% and less than 45% zinc by weight.

The first electrode may include more than 33% and less than 40% zinc byweight, and the second electrode may include more than 33% and less than50% zinc by weight.

In another general aspect, a deep ultraviolet (DUV) light sourceincludes a master oscillator includes a first master oscillatorelectrode and a second master oscillator electrode, the first masteroscillator electrode and the second master oscillator electrode beingseparated from each other to form a master oscillator discharge region,the master oscillator discharge region configured to receive a gainmedium including a noble gas and a halogen gas. At least one of thefirst master oscillator electrode and the second master oscillatorelectrode include a metal alloy including more than 33% and less than50% zinc by weight, and a power amplifier on a beam path, wherein, inoperational use, the master oscillator produces a seed light beam thatpropagates on the beam path and is amplified by the power amplifier.

Implementations may include one or more of the following features. Thepower amplifier may include a first power amplifier electrode; and asecond power amplifier electrode separated from the first poweramplifier electrode to form a power amplifier discharge region, thepower amplifier discharge region configured to receive a gain mediumincluding a noble gas and a halogen gas. At least one of the first poweramplifier electrode and the second power amplifier electrode includes ametal alloy including more than 33% and less than 50% zinc by weight.

In another general aspect, an anode for a deep ultraviolet (DUV) lightsource includes a substrate of a metal alloy material including at leastone metal component; and a surface on one side of the substrate. Inoperational use, the surface is positioned to face a cathode and adischarge region having a gain medium including a halogen gas, the metalcomponent in the surface reacts with the halogen gas to form a layer ofprotective material on the surface, and the layer of protective materialcovers the entire surface after at least thirty billion occurrences ofan electrical discharge between the anode and the cathode.

Implementations may include one or more of the following features. Thelayer of protective material may have a substantially uniform electricalconductivity after at least thirty billion occurrences of an electricaldischarge between the anode and the cathode. The layer of protectivematerial may have a substantially uniform thickness along a directionthat is parallel to a normal of the surface. The at least one metalcomponent of the substrate may include zinc. The metal component of thesubstrate may be more than 33% and less than 50% zinc by weight. Thesubstrate and the surface may form a single, bulk structure of the metalalloy. The metal alloy may include a second metal component, the secondmetal component including copper. The metal alloy also may includenickel.

In another general aspect, a method of operating a discharge chamber ofa deep ultraviolet light source includes applying a voltage to adischarge chamber that includes a first electrode and a secondelectrode, the voltage being sufficient to cause a population inversionin a gaseous gain medium including a halogen gas in a discharge regionbetween the first electrode and the second electrode; allowing a metalcomponent in the first electrode and/or the second electrode to reactwith the halogen gas to form a layer of protective material on a surfacethat faces the discharge region; and continuing to apply and remove thevoltage such that the voltage sufficient to cause the populationinversion is provide to the discharge chamber at temporal intervals andfor a total of at least thirty billion applications of the voltage toproduce a pulsed light beam.

In another general aspect, an electrode configured for use in an excimerlaser source includes a metal alloy including more than 33% and lessthan 50% zinc by weight.

Implementations of any of the techniques described above and herein mayinclude a process, an apparatus, an electrode, a photolithographysystem, a DUV light source, and/or a method. The details of one or moreimplementations are set forth in the accompanying drawings and thedescription below. Other features will be apparent from the descriptionand drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an example of a discharge chamber.

FIG. 2A is a block diagram is an example of a discharge chamber.

FIG. 2B is a block diagram of an anode of the discharge chamber of FIG.2A during steady-state operation.

FIG. 2C is a block diagram of the anode of FIG. 2B after 20 billiondischarge events.

FIG. 3 is a block diagram of another example of a discharge chamber.

FIGS. 4A-4C are photographs of example electrodes.

FIGS. 4D-4F are line drawing illustrations corresponding to theelectrodes of FIGS. 4A-4C, respectively.

FIG. 5A is a block diagram of an example of a photolithography system.

FIG. 5B is a block diagram of an example of a projection optical systemthat may be used in, for example, the photolithography system of FIG.5A.

FIGS. 6A and 6B relate to example experimental results for material lossfor metal alloys having different amounts of zinc by weight.

FIG. 7 is a block diagram of another example of a photolithographysystem.

FIG. 8A is an amplitude of an example of a wafer exposure signal as afunction of time.

FIG. 8B is an amplitude of an example of a gate signal as a function oftime.

FIG. 8C is an amplitude of an example of a trigger signal as a functionof time.

FIG. 9 are examples of measured beam quality (BQ) rate as a function ofa number of discharge events.

DETAILED DESCRIPTION

Referring to FIG. 1, a block diagram of a discharge chamber 110 isshown. The discharge chamber 110 is an example of a discharge chamberthat may be part of a deep ultraviolet (DUV) light source such as shownin FIGS. 5A and 7. The discharge chamber 110 includes an energy source115 and a gas mixture 118 inside of a housing 112. The gas mixture 118includes a gain medium formed from a noble gas and a halogen gas. Theenergy source 115 provides energy to the gas mixture 118 sufficient tocause a population inversion in the gain medium and to enable generationof an output light beam 111 via stimulated emission. The output lightbeam 111 may be provided to a photolithography system, such as shown inFIGS. 5A and 7, or to another discharge chamber. The energy source 115may be controlled to provide energy to the gas mixture 118 at regulartemporal intervals such that the light beam 111 is a pulsed light beamthat includes a plurality of pulses of light separated from each otherin time.

The energy source 115 includes electrodes 114, at least one of whichincludes a metal alloy 119. The electrodes 114 may be a pair ofelectrodes, with one being an anode and the other being a cathode. Thechemical composition of the metal alloy 119 extends the life of theenergy source 115 (and thus also the discharge chamber 110) as comparedto discharge chambers that rely on electrodes made from metal alloystraditionally used in a discharge chamber of a DUV light source.

Details of the metal alloy 119 are discussed with respect to, forexample, FIGS. 3, 4, 6A, and 6B. The operation of a discharge chamber ofa DUV light source with an anode that is formed from a traditionalmaterial is discussed with respect to FIGS. 2A-2C.

FIG. 2A is a side cross-sectional block diagram of a discharge chamber210. The discharge chamber 210 is an example of an existing or knowndischarge chamber 210 that may be used in a DUV light source. Thedischarge chamber 210 includes a cathode 214 a and an anode 214 b. Thecathode 214 a and the anode 214 b extend generally in the x-z planealong a longitudinal axis 209 of the discharge chamber 210. Theelectrodes 214 a and 214 b are made out of a traditional metal alloy219. The traditional metal alloy 219 may be, for example, an alloy ofcopper and zinc, where the alloy 219 includes 30% zinc by weight or lessthan 30% zinc by weight.

The cathode 214 a and the anode 214 b are separated from each otheralong the y axis by a distance d, with a discharge region 216 betweenthe cathode 214 a and the anode 214 b. The discharge region 216 includesa gas mixture 218, which is represented by a dotted pattern in FIG. 2A.The gas mixture 218 includes a gain medium formed from a noble gas and ahalogen gas. The noble gas may be, for example, argon, krypton, and/orxenon. The halogen gas may be, for example, fluorine. The gas mixture218 also may include a buffer gas.

A voltage source 220 is used to form a potential difference and electricfield between the cathode 214 a and the anode 214 b. The potentialdifference is large enough to cause an electric discharge (a flow ofelectrons, electric charge, or current) in the gas mixture 218 and toionize at least some of the halogen gas in the gas mixture 218. A“discharge event” is the application of voltage that forms the potentialdifference sufficient to cause an electrical discharge in the gasmixture 218. The electric field accelerates the electrons in the gainmedium, and the electrons collide with neutral atoms in the gas mixture218. The collisions cause electrons in the lower energy state to jump toa higher energy state, and a population inversion occurs in the gainmedium such that an output light beam 211 may be generated throughstimulated emission.

The ionization of the gas mixture 218 forms a halogen-containing plasmathat includes halogen ions that react with the metal alloy 219. Theionized gas mixture 218 is also referred to as the reactive gas. A layer213 b forms on a surface of the anode 214 b that faces the dischargeregion 216. The layer 213 b contains the reaction products formed by thereaction of the metal alloy 219 and the reactive gas. The layer 213 bforms after the first few discharge events. For example, the layer 213 bmay form after 10 or 100 discharge events.

The layer 213 b is less conductive than the metal alloy 219. As comparedto the metal alloy 219, the layer 213 b is also less reactive with thehalogen-containing plasma. Thus, the layer 213 b acts as a passivationlayer or a protective layer. In implementations in which the alloy 219includes zinc and copper, and the gas mixture 218 includes fluorine, thefluorine ions react with zinc before reacting with copper (because zinchas more affinity to react with fluorine compared with copper). Thus,the protective layer 213 b in these implementations is mainly zincfluoride (ZnF₂), but also includes CuF₂. A protective layer 213 a alsoforms on the cathode 214 a.

FIG. 2B shows a side block diagram of the anode 214 b duringsteady-state operation of the discharge chamber 210. In steady-stateoperation, discharge events occur at regular temporal intervals to formpulses of light. The protective layer 213 b may crack due to a dischargeevent, causing large regions of the underlying metal alloy 219 to becomeexposed. However, the surface of the exposed metal alloy 219 becomesre-coated with a new protective layer 213 b′ of mainly ZnF₂ such thatsubstantially all of the surface of the electrode 214 b that faces thedischarge region 216 continues to be covered during steady-stateoperation, and the output of the discharge chamber 210 is not affected.

Referring also to FIG. 2C, which is a side block diagram of the anode214 b, after many discharge events (for example, 20 billion), theprotective layer 213 b thickens along the y direction. The thickeningmay be caused by high current and/or high temperature at the protectivelayer 213 b. The thickening of the protective layer 213 b increases themechanical stress on the protective layer 213 b. Portions of theprotective layer 213 b begin to spall or flake off, exposing smallregions (such as the region 225) of the uncoated metal alloy 219.Because the metal alloy 219 at the region 225 is very reactive comparedto the neighboring layers 213 b, the region 225 attracts the neighboringcurrent so the temperature rises significantly at the region 225. Thehigh local temperature at the region 225 increases the reaction of themetal alloy 219 and the reactive gas and thus corrosion layers begin tobuild up at a higher rate and corrosion products grow or accumulate ontop of the protective layer 213 b. The corrosion layers and theaccumulated corrosion products resulting from this run-away corrosionprocess are labeled 224 in FIG. 2C and may be called “reefs.” The reefs224 are made from the same material as the protective layer 213 b andmay be considered to be localized areas of build-up of the products ofcorrosion caused by the halogen-containing plasma. The reefs 224 extendtoward the cathode 214 a and are made from the same material as theprotective layer 213 b.

The metal alloy 219 has a higher electrical conductivity than theprotective layer 213 b. Thus, the small exposed regions 225 attract thearc formed during a discharge event more strongly than protective layer213 b, resulting in a non-uniform electric field and arcing in thedischarge region 216. Arcing is undesirable because the arc can absorbenergy from the gain medium that would otherwise be used to form thelight beam 211. The deterioration of the protective layer 213 baccelerates, and the protective layer 213 b becomes spatially andelectrically non-uniform such that the beam 211 cannot be producedreliably. When the beam 211 cannot be reliably produced, the dischargechamber 210 is not able to function properly and has reached the end ofits lifespan. Thus, the formation of the reefs 224 shortens the life ofthe discharge chamber 210. The discharge chamber 210, which includes thecathode 214 a and the anode 214 b made from the traditional metal alloy219, begins to develop reefs after about 18 billion discharge events andhas a lifetime of about 30 billion discharge events or less.

Referring to FIG. 3, a side cross-sectional block diagram of a dischargechamber 310 is shown. The discharge chamber 310 is an example of adischarge chamber that may be part of a deep ultraviolet (DUV) lightsource such as shown in FIGS. 5A and 7. The discharge chamber 310includes electrodes 314 a, 314 b in a housing 312. In the example ofFIG. 3, the electrode 314 a is a cathode and the electrode 314 b is ananode. The anode 314 b includes a metal alloy 319 b. The chemicalcomposition of the metal alloy 319 b results in a more robust protectivelayer, thereby extending the life of the discharge chamber 310 ascompared to the discharge chamber 210.

The cathode 314 a and the anode 314 b extend generally in the x-z planeand along a direction parallel to a longitudinal axis 309 of thedischarge chamber 310. The cathode 314 a is separated from the anode 314b along the y axis by a distance d, and a discharge region 316 isbetween the cathode 314 a and the anode 314 b. The discharge region 316includes the gas mixture 218.

The ionization of the gas mixture 218 forms a halogen-containing plasmathat includes halogen ions, which react with the metal alloy 319 b. Thereaction between the metal alloy 319 and the halogen ions forms aprotective layer 313 b on a surface of the electrode 314 b that facesthe discharge region 316.

The metal alloy 319 b has a chemical composition that results in theprotective layer 313 b being more robust than the protective layer 219 bdiscussed with respect to FIGS. 2A-2C. For example, as compared to theprotective layer 219 b, the protective layer 313 b is more stronglyadhered to the bulk metal alloy 319 b such that the protective layer 313b does not crack as easily as the protective layer 219 b. As a result,exposure of the underlying bulk metal alloy 319 b is reduced oreliminated. Additionally, the layer 313 b may remain spatially and/orelectrically uniform for a greater number of discharge events than anelectrode made of a metal alloy traditionally used in a dischargechamber of a DUV light source. The protective layer 313 b may coversubstantially all of the portion of the electrode 314 b that faces thedischarge region 316 and/or may have a uniform conductivity even after30-60 billion discharge events. In contrast, a protective layer formedby an electrode made of a traditional metal alloy generally cracks andhas a non-uniform conductivity after about 20 billion discharge events.Using the metal alloy 319 b thus increases the number of dischargeevents that the electrode 314 b is able to withstand and thus alsoincreases the lifetime of the discharge chamber 310.

The metal alloy 319 b may be, for example, an alloy of copper and zincthat includes 33% to 50% zinc by weight, 33.5% zinc to 40% zinc byweight, 35% to 50% zinc by weight, 37% to 50% zinc by weight, 40% to 50%zinc by weight, or 33% to 45% zinc by weight. The metal alloy 319 b maybe, for example, 33.5% zinc by weight, 37% zinc by weight, or 45% zincby weight. In some implementations, the metal alloy 319 b also includesnickel.

Additionally or alternatively, the cathode 314 a may include a metalalloy 319 a that has a chemical composition that is different from thetraditional metal alloy 219 discussed with respect to FIGS. 2A-2C. Themetal alloy 319 a may be, for example, an alloy of copper and zinc thatincludes between 33% and 40% zinc by weight.

These compositions are in contrast to the typical metal alloys used forelectrodes in a discharge chamber of a DUV light source, such as thealloy 219 discussed with respect to FIGS. 2A-2C. Typical metal alloysfor an electrode in a DUV discharge chamber include alloys of copper andzinc, but with lower percentages of zinc by weight than the metal alloy319 b. For example, a typical anode used in a discharge chamber of a DUVlight source may be made of an alloy of copper and zinc, with the zincbeing 30% by weight. The applicant discovered that increasing the amountof zinc by weight produces an electrode that supports a more robustprotective layer. Zinc reacts with fluorine more readily than copperreacts with a halogen gas. For example, the protective layer formed froman alloy of copper and zinc in the presence of ionized fluorine is zincfluoride. It is believed that increasing the percentage of zinc in themetal alloy results in more zinc being exposed to the halogen-containingplasma that forms in the discharge region 316. Consequently, more zincfluoride is formed, and the protective layer 313 b is more robust.However, zinc has a relatively high vapor pressure, and metal alloyshaving more than about 50% zinc by weight evaporate readily and do notform the more robust protective layer. As such, the metal alloy 319 bhas a zinc content that is greater than the zinc content of atraditional electrode, but the metal alloy 319 b does not have such ahigh concentration of zinc that evaporation dominates over the formationof the protective layer.

Referring also to FIGS. 4A-4C, scanning electron microscope photographsof protective layers 413_1, 413_2, and 413_3 that formed on electrodes414_1, 414_2, and 414_3, respectively, are shown. The protective layers413_1, 413_2, 413_3 form on a bulk substrate 419 of the electrodes414_1, 414_2, 414_3 at boundaries 422_1, 422_2, 422_3, respectively.FIG. 4D is an approximate line drawing of the electrode 414_1. FIG. 4Eis an approximate line drawing of the electrode 414_2. FIG. 4F is anapproximate line drawing of the electrode 414_3.

The electrode 414_1 was formed from a metal alloy that includes zinc andcopper, with 5% zinc by weight. The electrode 414_2 was formed from ametal alloy that includes zinc and copper, with 30% zinc by weight. Theelectrode 414_3 was formed from a metal alloy that includes zinc andcopper, with 45% zinc by weight. Each electrode 414_1, 414_2, 414_3 wasexposed to ionized fluorine gas at a temperature of 450° C. for twohours. The temperature of 450° C. is believed to be approximately thesame as a surface temperature of an electrode in a discharge chamberduring the actual chamber operation because the thickness of theprotective layer formed on the electrodes 414_1, 414_2, 414_3 is closeto the thickness of a protective layer formed on an electrode used in adischarge chamber.

As shown in the photographs, the protective layer 413_3 is morespatially uniform than the protective layers 413_1 and 413_2. Theprotective layer 413_3 is also more dense and more securely bonded tothe underlying bulk metal alloy than the protective layers 413_1 and413_2. The appearance of the protective layer 413_3 indicates that it ismore robust than the protective layers 413_1 and 413_2, which formed onthe electrodes 414_1 and 414_3, respectively.

FIGS. 5A and 7 provide examples of DUV light sources in which anelectrode including a metal alloy such as the alloy 119 or 319 b may beused.

Referring to FIGS. 5A and 5B, a photolithography system 500 includes anoptical (or light) source 505 that provides a light beam 511 to alithography exposure apparatus 569, which processes a wafer 570 receivedby a wafer holder or stage 571. The light source 505 includes adischarge chamber 510, which encloses a cathode 514 a and an anode 514b. Only one gas discharge chamber 510 is shown in FIG. 5A; however, thelight source 505 may include more than one discharge chamber.

The light beam 511 is a pulsed light beam that includes pulses of lightseparated from each other in time. The lithography exposure apparatus569 includes a projection optical system 575 through which the lightbeam 511 passes prior to reaching the wafer 570, and a metrology system572. The metrology system 572 may include, for example, a camera orother device that is able to capture an image of the wafer 570 and/orthe light beam 511 at the wafer 570, or an optical detector that is ableto capture data that describes characteristics of the light beam 511,such as intensity of the light beam 511 at the wafer 570 in the x-yplane. The lithography exposure apparatus 569 can be a liquid immersionsystem or a dry system. The photolithography system 500 also includes acontrol system 550 to control the light source 505 and/or thelithography exposure apparatus 569.

Microelectronic features are formed on the wafer 570 by, for example,exposing a layer of radiation-sensitive photoresist material on thewafer 570 with the light beam 511. Referring also to FIG. 5B, theprojection optical system 575 includes a slit 576, a mask 574, and aprojection objective, which includes a lens system 577. The lens system577 includes one or more optical elements. The light beam 511 enters theoptical system 575 and impinges on the slit 576, and at least some ofthe beam 511 passes through the slit 576. In the example of FIGS. 5A and5B, the slit 576 is rectangular and shapes the light beam 511 into anelongated rectangular shaped light beam. A pattern is formed on the mask574, and the pattern determines which portions of the shaped light beamare transmitted by the mask 574 and which are blocked by the mask 574.The design of the pattern is determined by the specific microelectroniccircuit design that is to be formed on the wafer 570.

The cathode 514 a and/or the anode 514 b includes a metal alloy that hasa composition that forms a more robust protective layer as compared to ametal alloy traditionally used in a discharge chamber of a DUV lightsource. For example, the anode 514 b may for example, an alloy of copperand zinc that includes 33% to 50% zinc by weight, 33.5% zinc to 40% zincby weight, 35% to 50% zinc by weight, 37% to 50% zinc by weight, 40% to50% zinc by weight, or 33% to 45% zinc by weight. The metal alloy usedin the anode 514 b may be, for example, 33.5% zinc by weight, 37% zincby weight, or 45% zinc by weight. Moreover, it is contemplated that forvarious applications suitable electrode compositions may includeapproximately 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 40%, 42%, 44%,46%, 48%, or 50% zinc, or any ranges there between (for example,33%-38%).

In some implementations, only the anode uses the metal alloy that hasthe increased zinc content. In other implementations, both the cathode514 a and the anode 514 b include a metal alloy that has a greateramount of zinc by weight than a metal alloy traditionally used in a DUVlight source discharge chamber. Increasing the amount of zinc in thecathode 514 a decreases the material loss rate of the cathode 514 a.However, increasing the amount of zinc in the cathode 514 a alsoincreases the material loss rate of the anode 514 b. Thus, to achieveoptimal performance of the discharge chamber 510, the amount of zinc inthe metal alloys used for the cathode 514 a and the anode 514 b may bedifferent from the amounts that would be expected to result in theminimum material loss rate.

FIGS. 6A and 6B, discuss experimental results related to material lossrate for segments of metal alloys that include different amounts of zincafter being exposed to ionized fluorine gas. The material loss rateprovides a measurement of an amount of material lost from a segmentalong the y axis due to exposure to the ionized fluorine gas. A greateramount of material loss indicates that a segment includes a metal alloyis more reactive.

FIG. 6A is a side block diagram of a cathode 614 a and an anode 614 b.The cathode 614 a and the anode 614 b are parallel to each other andextend along the x axis. The cathode 614 a includes segments 1-7. Thesegments 1-7 make physical contact with each other and extend along thex axis. The anode 614 b includes a metal alloy of copper and zinc, withthe zinc being 37% of the metal alloy by weight. The segments 1-7 werealso a metal alloy of copper and zinc. To assess the effect of zinccontent of the cathode, the amount of zinc in each of the segments 1-7was varied. The segments 2 and 5 included 15% zinc by weight, thesegment 3 included 33.5% zinc by weight, the segment 4 included 37% zincby weight, and the segments 1, 6, and 7 included 30% zinc by weight. Theamount of zinc in the anode 614 b was 37% throughout the anode 614 b.

The amount of erosion or material loss was measured after 10.035 billiondischarge events (or produced pulses). An electrode scanner was used tomeasure the height profiles of the segments 1-7. The height of thesegments 1-7 is the extent along they axis. For each segment, the heightprofile was measured at two or more locations along the x axis. Themeasured heights of a segment were averaged, and the average was used asthe measured height of that segment. The material loss was determinedfrom the original height of a segment and the measured height of thesegment after exposure to the ionized fluorine gas.

FIG. 6B shows the measured material loss rate in microns (μm) perbillion pulses (BP) for cathode segments 2-4 and 6 and the anode 614 b.In FIG. 6B, the material loss rate is plotted as a function of thesegment identifier. A plot 680 represents the material loss rate for thecathode 614 a, and a plot 681 represents the material loss rate for theanode 614 b.

The material loss rate for the anode 614 b for a particular cathodesegment is the material loss rate measured for the portion of the anode614 b that is aligned in the y axis with a cathode segment. Although theanode 614 b has a constant amount of zinc along the x axis, the materialloss rate of the anode 614 b varies with the changes in zinc content ofthe segments 1-7. The cathode material loss rate for segment 2 (15% zincby weight) was 27 μm/BP, and the anode material loss rate was 43 μm/BP.The cathode material loss rate for segment 6 (30% zinc by weight) was 18μm/BP, and the anode material loss rate was 49 μm/BP. The cathodematerial loss rate for segment 3 (33.5% zinc by weight) was 13 μm/BP,and the anode erosion rate was 51 μm/BP. The cathode erosion rate forsegment 4 (37% zinc by weight) was 11 μm/BP, and the anode erosion ratewas 55 μm/BP.

Thus, the cathode material loss rate decreased as the amount of zinc inthe cathode 614 a increased. Decreasing the material loss rate isgenerally beneficial and leads to a longer discharge chamber lifetime.However, increasing the amount of zinc in the cathode also caused thematerial loss rate of the anode 614 b to increase. As such, in someimplementations in which the anode and the cathode both include a metalalloy that has a higher amount of zinc by weight than a metal alloytraditionally used in a discharge chamber of a DUV light source, theamount of zinc in the cathode may be less than the amount of zinc in theanode to strike a balance between erosion of the cathode and erosion ofthe anode. For example and referring again to FIG. 5A, the anode 514 bmay be made from a metal alloy that includes copper and zinc, with 33%to 50% zinc by weight, and the cathode 514 a may be made from a metalalloy that includes copper and zinc, with 33% to 40% zinc by weight. Insome implementations, the anode 514 b may be made from a metal alloythat includes copper and zinc, with 37% zinc by weight, and the cathode514 a may be made from a metal alloy that includes copper and zinc, with33% zinc by weight.

The amount of material loss for two segments having the same amount ofzinc but located in different portions of the discharge chamber may bedifferent due to non-uniformities in the discharge chamber. For example,the segment 2 and the segment 5 both include a metal alloy of copper andzinc, with 15% zinc by weight. The material loss rate for segment 2 was27 μm/BP, and the material loss rate for segment 5 was 24 μm/BP.However, the difference in material loss rate due to location wasobserved to be less significant than the differences in material lossrate due to zinc content and does not change the conclusions regardingthe effect of zinc content on material loss rate.

Referring to FIG. 7, a block diagram of a photolithography system 700 isshown. The system 700 is an example of an implementation of the system500 (FIG. 5A). For example, in the photolithography system 700, anoptical source 705 is used as the optical source 505 (FIG. 5A). Theoptical source 705 produces a pulsed light beam 711, which is providedto the lithography exposure apparatus 569. The photolithography system700 also includes a control system 750, which, in the example of FIG. 7,is connected to components of the optical source 705 as well as to thelithography exposure apparatus 569 to control various operations of thesystem 700. In other implementations, the control system 750 may beimplemented as two separate control systems, one to control variousaspects of the optical source 705 and another to control the lithographyexposure apparatus.

In the example shown in FIG. 7, the optical source 705 is a two-stagelaser system that includes a master oscillator (MO) 701 that provides aseed light beam 706 to a power amplifier (PA) 702. The MO 701 and the PA702 may be considered to be subsystems of the optical source 705 orsystems that are part of the optical source 705. The power amplifier 702receives the seed light beam 706 from the master oscillator 701 andamplifies the seed light beam 706 to generate the light beam 711 for usein the lithography exposure apparatus 569. For example, the masteroscillator 701 may emit a pulsed seed light beam, with seed pulseenergies of approximately 1 milliJoule (mJ) per pulse, and these seedpulses may be amplified by the power amplifier 702 to about 10 to 15 mJ.

The master oscillator 701 includes a discharge chamber 710_1 having twoelongated electrodes 714 a_1 and 714 b_1, a gain medium 718_1 that is agas mixture, and a fan (not shown) for circulating the gas mixturebetween the electrodes 714 a_1, 714 b_1. The electrode 714 a_1 and/orthe electrode 714 b_1 is made from a metal alloy that includes copperand zinc and has a higher concentration of zinc by weight than a metalalloy typically used in a discharge chamber of a DUV master oscillator.In the example shown, the electrode 714 a_1 is a cathode, and theelectrode 714 b_1 is an anode. The cathode 714 a_1 may contain 33% to40% zinc by weight, and the anode 714 b_1 may contain 33% to 50% zinc byweight.

A resonator is formed between a line narrowing module 780 on one side ofthe discharge chamber 710_1 and an output coupler 781 on a second sideof the discharge chamber 710_1. The line narrowing module 780 mayinclude a diffractive optic such as a grating that finely tunes thespectral output of the discharge chamber 710_1. The optical source 705also includes a line center analysis module 784 that receives an outputlight beam from the output coupler 781 and a beam coupling opticalsystem 738. The line center analysis module 784 is a measurement systemthat may be used to measure or monitor the wavelength of the seed lightbeam 706. The line center analysis module 784 may be placed at otherlocations in the optical source 705, or it may be placed at the outputof the optical source 705.

The gas mixture 718_1 may be any gas suitable for producing a light beamat the wavelength and bandwidth required for the application. For anexcimer source, the gas mixture may contain a noble gas (rare gas) suchas, for example, argon or krypton, a halogen, such as, for example,fluorine or chlorine and traces of xenon apart from a buffer gas, suchas helium. Specific examples of the gas mixture include argon fluoride(ArF), which emits light at a wavelength of about 193 nm, kryptonfluoride (KrF), which emits light at a wavelength of about 248 nm, orxenon chloride (XeCl), which emits light at a wavelength of about 351nm. The excimer gain medium (the gas mixture) is pumped with short (forexample, nanosecond) current pulses in a high-voltage electric dischargeby application of a voltage to the elongated electrodes 714 a_1, 714b_1.

The power amplifier 702 includes a beam coupling optical system 783 thatreceives the seed light beam 706 from the master oscillator 701 anddirects the light beam 706 through a discharge chamber 710_2, and to abeam turning optical element 782, which modifies or changes thedirection of the seed light beam 706 so that it is sent back into thedischarge chamber 710_2. The beam turning optical element and the beamcoupling optical system 783 form a circulating and closed loop path inwhich the input into a ring amplifier intersects the output of the ringamplifier at the beam coupling apparatus 783.

The discharge chamber 710_2 includes a pair of elongated electrodes 714a_2, 714 b_2, a gas mixture 718_2, and a fan (not shown) for circulatingthe gas mixture 718_2 between the electrodes 714 a_2, 714 b_2. The gasmixture 718_2 may be the same as the gas mixture 718_1. The electrode714 a_2 and/or the electrode 714 b_2 is made from a metal alloy thatincludes copper and zinc and has a higher concentration of zinc byweight than a metal alloy typically used in a discharge chamber of a DUVmaster oscillator. In the example shown, the electrode 714 a_2 is acathode, and the electrode 714 b_2 is an anode. The cathode 714 a_2 maycontain 33% to 40% zinc by weight, and the anode 714 b_2 may contain 33%to 50% zinc by weight.

The output light beam 711 may be directed through a beam preparationsystem 785 prior to reaching the lithography exposure apparatus 569. Thebeam preparation system 785 may include a bandwidth analysis module thatmeasures various parameters (such as the bandwidth or the wavelength) ofthe beam 711. The beam preparation system 785 also may include a pulsestretcher (not shown) that stretches each pulse of the output light beam711 in time. The beam preparation system 785 also may include othercomponents that are able to act upon the beam 711 such as, for example,reflective and/or refractive optical elements (such as, for example,lenses and mirrors), filters, and optical apertures (including automatedshutters).

The photolithography system 700 also includes the control system 750.The control system 750 may control when the optical source 705 emits apulse of light or a burst of light pulses that includes one or morepulses of light by sending one or more signals to the optical source705. The control system 750 is also connected to the lithographyexposure apparatus 569. Thus, the control system 750 also may controlthe various aspects of the lithography exposure apparatus 569. Forexample, the control system 750 may control the exposure of the wafer570 (FIG. 5B) and thus may be used to control how electronic featuresare printed on the wafer 570. In some implementations, the controlsystem 750 may control the scanning of the wafer 570 by controlling themotion of the slit 576 in the x-y plane (FIG. 5B). Moreover, the controlsystem 750 may exchange data with the metrology system 572 and/or theoptical system 575 (FIG. 5B).

The lithography exposure apparatus 569 also may include, for example,temperature control devices (such as air conditioning devices and/orheating devices), and/or power supplies for the various electricalcomponents. The control system 750 also may control these components. Insome implementations, the control system 750 is implemented to includemore than one sub-control system, with at least one sub-control system(a lithography controller) dedicated to controlling aspects of thelithography exposure apparatus 569. In these implementations, thecontrol system 750 may be used to control aspects of the lithographyexposure apparatus 569 instead of, or in addition to, using thelithography controller.

The control system 750 includes an electronic processor 751, anelectronic storage 752, and an I/O interface 753. The electronicprocessor 751 includes one or more processors suitable for the executionof a computer program such as a general or special purposemicroprocessor, and any one or more processors of any kind of digitalcomputer. Generally, an electronic processor receives instructions anddata from a read-only memory, a random access memory, or both. Theelectronic processor 751 may be any type of electronic processor.

The electronic storage 752 may be volatile memory, such as RAM, ornon-volatile memory. In some implementations, and the electronic storage752 includes non-volatile and volatile portions or components. Theelectronic storage 752 may store data and information that is used inthe operation of the control system 750, components of the controlsystem 750, and/or systems controlled by the control system 750. Theinformation may be stored in, for example, a look-up table or adatabase.

The electronic storage 752 also may store instructions, perhaps as acomputer program, that, when executed, cause the processor 751 tocommunicate with components in the control system 750, the opticalsystem 705, and/or the lithography exposure apparatus 569.

The I/O interface 753 is any kind of electronic interface that allowsthe control system 750 to receive and/or provide data and signals withan operator, the optical system 705, the lithography exposure apparatus569, any component or system within the optical system 705 and/or thelithography exposure apparatus 569, and/or an automated process runningon another electronic device. For example, the I/O interface 753 mayinclude one or more of a visual display, a keyboard, and acommunications interface.

FIGS. 8A-8C provide an overview of the production of pulses and burstsin the optical source 705. The light beam 711 is a pulsed light beamsand may include one or more bursts of pulses that are separated fromeach other in time. Each burst may include one or more pulses of light.In some implementations, a burst includes hundreds of pulses, forexample, 100-400 pulses. FIG. 8A shows an amplitude of a wafer exposuresignal 800 as a function of time, FIG. 8B shows an amplitude of a gatesignal 815 as a function of time, and FIG. 8C shows an amplitude of atrigger signal as a function of time.

The control system 850 may be configured to send the wafer exposuresignal 800 to the optical source 705 to control the optical source 705to produce the light beam 711. In the example shown in FIG. 7A, thewafer exposure signal 800 has a high value 805 (for example, 1) for aperiod of time 807 during which the optical source 705 produces burstsof pulses of light. The wafer exposure signal 800 otherwise has a lowvalue 810 (for example, 0) when the wafer 570 is not being exposed.

Referring to FIG. 8B, the light beam 711 is a pulsed light beam, and thelight beam 711 includes bursts of pulses. The control system 750 alsocontrols the duration and frequency of the bursts of pulses by sending agate signal 815 to the optical source 705. The gate signal 815 has ahigh value 820 (for example, 1) during a burst of pulses and a low value825 (for example, 0) during the time between successive bursts. In theexample shown, the duration of time at which the gate signal 815 has thehigh value is also the duration of a burst 816. The bursts are separatedin time by an inter-burst time interval. During the inter-burst timeinterval, the lithography exposure apparatus 569 may position the nextdie on the wafer 570 for exposure.

Referring to FIG. 8C, the control system 750 also controls therepetition rate of the pulses within each burst with a trigger signal830. The trigger signal 830 includes triggers 840, one of which isprovided to the optical source 705 to cause the optical source 705 toproduce a pulse of light. The control system 750 may send a trigger 840to the source 705 each time a pulse is to be produced. Thus, therepetition rate of the pulses produced by the optical source 705 (thetime between two successive pulses) may be set by the trigger signal830.

When the gain medium of the gas mixture 718_1 or the gas mixture 718_2is pumped by applying voltage to the electrodes 714 a_1, 714 b_1 or 714a_2, 714 b_2, respectively, the gain medium of the gas mixture emitslight. As discussed above, the application of such a voltage is adischarge event. When voltage is applied to the electrodes at regulartemporal intervals, the light beam 711 is pulsed. Thus, the repetitionrate of the pulsed light beam 711 is determined by the rate at whichvoltage is applied to the electrodes. The trigger signal 830, forexample, may be used to control the application of voltage to theelectrodes and the repetition rate of the pulses, which may rangebetween about 500 and 6,000 Hz for most applications. In someimplementations, the repetition rate may be greater than 6,000 Hz, andmay be, for example, 12,000 Hz or greater.

FIG. 9 is a plot that shows measured master oscillator beam quality (BQ)rate as a function of generated pulses or discharge events. The data forFIG. 9 was obtained from a master oscillator such as the MO 701 of FIG.7. The BQ rate indicates how many beam quality events have occurred inthe optical source 705. A beam quality event occurs when any aspect ofthe seed light beam 706 or the beam 711 does not meet a pre-definedspecification. For example, a beam quality event occurs when the beam706 or 711 has an optical energy, spectral bandwidth, and/or wavelengthoutside of an accepted range of values. The BQ rate of FIG. 9 is thenumber of beam quality events (or a BQ count) per billion generatedpulses or discharge events. In the example of FIG. 9, an upper limit ofacceptable BQ rate for the MO 701 was 50.

In the example of FIG. 9, a plot 991 (dash-dot line) represents BQ rate(BQ count per billion pulses) for a system in which the electrodes 714a_1 and 714 b_1 of the MO 701 were made from a traditional alloy ofcopper and zinc, with the amount of zinc being 30% by weight. A plot 992(dashed line) represents BQ rate for a system in which the anode 714 b_1was made from an alloy of copper and zinc, with the amount of zinc being33.5% by weight. A plot 993 (solid line) represents BQ rate for a systemin which the anode 714 b_1 was made from an alloy of copper and zinc,with the amount of zinc being 37% by weight.

As shown by comparing the plots 992 and 993 to the plot 991, increasingthe zinc content of the electrode 714 b_1 allows the MO 701 to producemany more pulses of the seed light beam 706 without exceeding the upperBQ rate limit. For example, the system with the anode made from thetraditional alloy exceeds the upper BQ rate limit around 22 BP. Thesystem with the anodes having 33.5% zinc and 37% zinc by weight hadlower beam quality rates up to and greater than 40 BP. The electrodehaving 33.5% zinc formed reefs at around 35 BP, and the electrode having37% zinc had not formed reefs at 50 BP. Thus, increasing the amount ofzinc in the electrodes of the discharge chamber improved performance ofthe MO 701 as compared to using the traditional metal alloy.

The embodiments may further be described using the following clauses:

1. A discharge chamber for a deep ultraviolet (DUV) light source, thedischarge

chamber comprising:

a housing; and

a first electrode and a second electrode in the housing, the firstelectrode and the second electrode being separated from each other toform a discharge region between the first electrode and the secondelectrode, the discharge region being configured to receive a gainmedium comprising at least one noble gas and a halogen gas, wherein

at least one of the first electrode and the second electrode comprises ametal alloy comprising more than 33% and less than 50% zinc by weight.

2. The discharge chamber of clause 1, wherein the first electrode is acathode and the second electrode is an anode, and the second electrodecomprises the metal alloy comprising more than 33% and less than 50%zinc by weight.

3. The discharge chamber of clause 2, wherein the metal alloy furthercomprises copper.

4. The discharge chamber of clause 3, wherein the halogen gas comprisesfluorine.

5. The discharge chamber of clause 4, wherein the noble gas comprisesargon, krypton, neon, and/or xenon.

6. The discharge chamber of clause 5, wherein the metal alloy of thesecond electrode comprises between 35% and 50% zinc by weight.

7. The discharge chamber of clause 5, wherein the metal alloy of thesecond electrode comprises between 37% and 50% zinc by weight.

8. The discharge chamber of clause 5, wherein the metal alloy of thesecond electrode comprises between 40% and 50% zinc by weight.

9. The discharge chamber of clause 5, wherein the metal alloy of thesecond electrode comprises more than 33% and less than 45% zinc byweight.

10. The discharge chamber of clause 2, wherein the first electrodecomprises more than 33% and less than 40% zinc by weight, and the secondelectrode comprises more than 33% and less than 50% zinc by weight.

11. A deep ultraviolet (DUV) light source comprising:

a master oscillator comprising a first master oscillator electrode and asecond master oscillator electrode, the first master oscillatorelectrode and the second master oscillator electrode being separatedfrom each other to form a master oscillator discharge region, the masteroscillator discharge region configured to receive a gain mediumcomprising a noble gas and a halogen gas, wherein at least one of thefirst master oscillator electrode and the second master oscillatorelectrode comprise a metal alloy comprising more than 33% and less than50% zinc by weight; and

a power amplifier on a beam path, wherein, in operational use, themaster oscillator produces a seed light beam that propagates on the beampath and is amplified by the power amplifier.

12. The DUV light source of clause 11, wherein the power amplifiercomprises:

a first power amplifier electrode; and

a second power amplifier electrode separated from the first poweramplifier electrode to form a power amplifier discharge region, thepower amplifier discharge region configured to receive a gain mediumcomprising a noble gas and a halogen gas, wherein at least one of thefirst power amplifier electrode and the second power amplifier electrodecomprise a metal alloy comprising more than 33% and less than 50% zincby weight.

13. An anode for a deep ultraviolet (DUV) light source, the anodecomprising:

a substrate of a metal alloy material comprising at least one metalcomponent; and

a surface on one side of the substrate, wherein

in operational use, the surface is positioned to face a cathode and adischarge region having a gain medium comprising a halogen gas,

-   -   the metal component in the surface reacts with the halogen gas        to form a layer of protective material on the surface, and

the layer of protective material covers the entire surface after atleast thirty billion occurrences of an electrical discharge between theanode and the cathode.

14. The anode of clause 13, wherein the layer of protective material hasa substantially uniform electrical conductivity after at least thirtybillion occurrences of an electrical discharge between the anode and thecathode.

15. The anode of clause 13, wherein the layer of protective material hasa substantially uniform thickness along a direction that is parallel toa normal of the surface.

16. The anode of clause 13, wherein the at least one metal component ofthe substrate comprises zinc.

17. The anode of clause 16, wherein the metal component of the substrateis more than 33% and less than 50% zinc by weight.

18. The anode of clause 13, wherein the substrate and the surface form asingle, bulk structure of the metal alloy.

19. The anode of clause 16, wherein the metal alloy comprises a secondmetal component, the second metal component comprising copper.

20. The anode of clause 19, wherein the metal alloy further comprisesnickel.

21. A method of operating a discharge chamber of a deep ultravioletlight source, the method comprising:

applying a voltage to a discharge chamber that comprises a firstelectrode and a second electrode, the voltage being sufficient to causea population inversion in a gaseous gain medium comprising a halogen gasin a discharge region between the first electrode and the secondelectrode;

allowing a metal component in the first electrode and/or the secondelectrode to react with the halogen gas to form a layer of protectivematerial on a surface that faces the discharge region; and

continuing to apply and remove the voltage such that the voltagesufficient to cause the population inversion is provide to the dischargechamber at temporal intervals and for a total of at least thirty billionapplications of the voltage to produce a pulsed light beam.

-   22. A electrode configured for use in an excimer laser source, the    electrode comprising a metal alloy comprising more than 33% and less    than 50% zinc by weight.

Other implementations are within the scope of the claims.

What is claimed is:
 1. A discharge chamber for a deep ultraviolet (DUV) light source, the discharge chamber comprising: a housing; and an anode and a cathode in the housing, the anode and the cathode being separated from each other to form a discharge region between the anode and the cathode, the discharge region being configured to receive a gain medium comprising at least one noble gas and a halogen gas, wherein the anode consists only of a single anode bulk material and the cathode consists only of a single cathode bulk material, and the anode bulk material comprises a metal alloy comprising 35% to 50% zinc by weight.
 2. The discharge chamber of claim 1, wherein the cathode bulk material comprises the metal alloy comprising 31% to 40% zinc by weight.
 3. The discharge chamber of claim 1, wherein the cathode bulk material comprises the metal alloy comprising 33% to 40% zinc by weight.
 4. The discharge chamber of claim 1, wherein the cathode bulk material comprises the metal alloy comprising 31% to 38% zinc by weight.
 5. The discharge chamber of claim 1, wherein the cathode bulk material comprises the metal alloy comprising 31% zinc by weight or 37% zinc by weight.
 6. The discharge chamber of claim 1, wherein the anode bulk material comprises the metal alloy comprising 36% to 49% zinc by weight.
 7. The discharge chamber of claim 1, wherein the anode bulk material comprises the metal alloy comprising 37% zinc by weight or 48% zinc by weight.
 8. The discharge chamber of claim 1, wherein the metal alloy further comprises copper.
 9. The discharge chamber of claim 1, wherein the halogen gas comprises fluorine.
 10. The discharge chamber of claim 1, wherein the noble gas comprises argon, krypton, neon, and/or xenon.
 11. A deep ultraviolet (DUV) light source comprising: a master oscillator comprising a master oscillator anode and a master oscillator cathode, the master oscillator anode and the master oscillator cathode being separated from each other to form a master oscillator discharge region, the master oscillator discharge region configured to receive a gain medium comprising a noble gas and a halogen gas, wherein the master oscillator anode consists only of a single anode bulk material and the master oscillator cathode consists only of a single cathode bulk material, wherein the anode bulk material comprises a metal alloy comprising 35% to 50% zinc by weight; and a power amplifier on a beam path, wherein, in operational use, the master oscillator produces a seed light beam that propagates on the beam path and is amplified by the power amplifier.
 12. The DUV light source of claim 11, wherein the power amplifier comprises: a power amplifier anode; and a power amplifier cathode separated from the power amplifier anode to form a power amplifier discharge region, the power amplifier discharge region configured to receive a gain medium comprising a noble gas and a halogen gas, wherein the power amplifier anode consists only of a single anode bulk material and the power amplifier cathode consists only of a single cathode bulk material and wherein the anode bulk material of the power amplifier anode comprises a metal alloy comprising 35% to 50% zinc by weight.
 13. An anode for a deep ultraviolet (DUV) light source, the anode comprising: a substrate consisting solely of a single bulk material comprising a metal alloy comprising 33% to 50% zinc by weight; and a surface on one side of the substrate, wherein in operational use, the surface is positioned to face a cathode and a discharge region having a gain medium comprising a halogen gas, the metal component in the surface reacts with the halogen gas to form a layer of protective material on the surface, and the layer of protective material covers the entire surface after at least thirty billion occurrences of an electrical discharge between the anode and the cathode.
 14. The anode of claim 13, wherein the layer of protective material has a substantially uniform electrical conductivity after at least thirty billion occurrences of an electrical discharge between the anode and the cathode.
 15. The anode of claim 13, wherein the layer of protective material has a substantially uniform thickness along a direction that is parallel to a normal of the surface.
 16. The anode of claim 13, wherein the metal alloy comprises 35% to 50% zinc by weight.
 17. The anode of claim 13, wherein the substrate and the surface form a single, bulk structure of the metal alloy.
 18. The anode of claim 16, wherein the metal alloy comprises a second metal component, the second metal component comprising copper.
 19. The anode of claim 16, wherein the metal alloy further comprises nickel.
 20. An anode configured for use in an excimer laser source, the anode consisting only of a single anode bulk material comprising a metal alloy comprising 35% to 50% zinc by weight. 